METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING STORAGE NODE LANDING PADS SEPARATED FROM BIT LINE CONTACT PLUGS

摘要

A method can include forming gate lines on a semiconductor substrate and forming a first interlayer dielectric layer for insulating the gate lines from each other. First and second contact plugs are formed on the semiconductor substrate and landing pads are formed on the first contact plugs and the first interlayer dielectric layer to overlap portions of the first contact plugs. Recessed contact plugs are formed to have recessed portions by etching the second contact plugs, to be located below an upper surface of the first interlayer dielectric layer, where a cross-sectional total distance between the landing pads and the recessed contact plugs increases due to the recessed portions.