发明名称 MAIN DRIVER FOR SEMICONDUCTOR MEMORY DEVICE AND THEREOF CONTROL METHOD
摘要 PURPOSE: A main driver for semiconductor memory device and thereof control method are provided to reduce the parasitic capacitance value of the main driver. CONSTITUTION: The main driver for semiconductor memory device and thereof control method includes a pull up driving part and pull down driving part for supplying current to an output line and a pull up driving part and pull down driving part for improvement transistor(200). The linearity improvement transistor is operated by supplying current to the output line. The improvement transistor is formed in connected transistor pair.
申请公布号 KR20090108413(A) 申请公布日期 2009.10.15
申请号 KR20080033814 申请日期 2008.04.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, CHANG KUN;KIM, YONG JU;HAN, SUNG WOO;SONG, HEE WOONG;OH, IC SU;KIM, HYUNG SOO;HWANG, TAE JIN;CHOI, HAE RANG;LEE, JI WANG;JANG, JAE MIN
分类号 G11C7/10;G11C5/14 主分类号 G11C7/10
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