| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mask pattern forming method which can form desirted resist patterns accurately and stably on a substrate material like SiC having optical transparency. <P>SOLUTION: A light reflective film is formed on a semiconductor substrate having optical transparency. A photoresist is formed on the light reflective film. Exposure light is projected through a master mask onto a focal position adjusted based on light reflected by the light reflective film when projecting focus detecting light onto the semiconductor substrate, thereby exposing the photoresist. Then, exposed portions or portions other than the exposed portions of the photoresist are removed so as to pattern the photoresist. <P>COPYRIGHT: (C)2010,JPO&INPIT |
