PATTERN FORMING METHOD, WIRING STRUCTURE, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method for making an opening part between adjacent patterns finer than resolution of a projection exposing machine and for preventing the occurrence of deviation of dimensional precision between patterns.

SOLUTION: The pattern forming method comprises: a step of forming a coating to be etched; a step of forming a plurality of mask patterns on an upper layer of the coating by corresponding to regions being desirable to be left as a plurality of patterns; and a step of forming patterns of the coatings by performing etching treatment by using a plurality of mask patterns as masks. Each of a plurality of mask patterns is formed by the first coating pattern and the second coating pattern having a laminated region in a region in part of the first coating pattern. Width in the transverse direction of the laminated region is the same between adjacent mask patterns in a plurality of different mask patterns.

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