摘要 |
<p>In accordance with aspects of the invention, a method of forming a memory cell is provided, the method including forming a steering element above a substrate, and forming a memory element coupled to the steering element, wherein the memory element comprises a carbon-based material having a thickness of not more than ten atomic layers. The memory element may be formed by repeatedly performing the following steps: forming a layer of a carbon-based material, the layer having a thickness of about one monolayer, and subjecting the layer of carbon-based material to a thermal anneal. Other aspects are also described.</p> |
申请人 |
SANDISK 3D, LLC;SCHEUERLEIN, ROY, E.;ILKBAHAR, ALPER;SCHRICKER, APRIL, D. |
发明人 |
SCHEUERLEIN, ROY, E.;ILKBAHAR, ALPER;SCHRICKER, APRIL, D. |