发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING TEST SIGNAL GENERATOR
摘要 PURPOSE: A semiconductor memory device having a test signal generation circuit is provided to obtain the gain of product cost by reducing the test time. CONSTITUTION: A semiconductor memory device having a test signal generation circuit includes the first test signal generation unit and the second test signal generation unit. The first test signal generation unit produces the first test signal in response to the test clear signal in the first mode selected according to the mode selection signal. The second test signal generation unit produces the redundancy cell test signal and the normal cell test signal in response to the test clear signal in the second mode selected according to the mode selection signal.
申请公布号 KR20090108160(A) 申请公布日期 2009.10.15
申请号 KR20080033446 申请日期 2008.04.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JEE EUN;PARK, MUN PHIL
分类号 G11C29/00 主分类号 G11C29/00
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