| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and a nonvolatile semiconductor memory system by which data can be prevented from being erroneously written when the data is written in a memory cell being close to a bit line in a NAND string. <P>SOLUTION: When data is written in a page corresponding to the prescribed word line in a nonvolatile semiconductor memory device provided with memory cells in which data can be rewritten electrically, a memory cell array constituted by bundling a plurality of NAND string structure in which a plurality of memory cells are connected in series, word lines connected to control gates of the memory cells, and a source line connected to one end of the NAND string structure, the nonvolatile semiconductor memory device includes: a means for determining whether all memory cells of a source line side being more than the prescribed word line are in an erasure state or not; and a means for adjusting word line voltage of the source line side more than the prescribed word line when all memory cells of a source line side being more than the prescribed word line are in the erasure state. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
