| 摘要 |
PROBLEM TO BE SOLVED: To reduce in-plane variation in Hf density so as to suppress characteristic variation of a MOS transistor whose gate insulating film contains Hf. SOLUTION: An insulating film (40) which contains silicon oxide or silicon oxynitride is formed on a semiconductor substrate by thermal oxidation. The gas (45) containing Hf is supplied onto the insulating film to deposit Hf atoms (41) on the insulating film. The insulating film where the Hf atoms are deposited is subjected to a heat treatment in an oxygen atmosphere (46). After the heat treatment in the oxygen atmosphere, gate electrodes (50P, 50N) are formed on the insulating film. A source region and a drain region (52P, 52N) are formed on both sides of the gate electrodes. COPYRIGHT: (C)2010,JPO&INPIT
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