发明名称 METHOD FOR FORMING A PRIMING LAYER FOR DEPOSITING A METAL ON A SUBSTRATE
摘要 The invention relates to a method for forming, on a substrate (5), a priming layer enabling a subsequent deposit of a layer of a metal, which comprises immersing the substrate in a bath (7) including a material in the ethoxysilanes or siloxanes families and a copper or nickel amidinate.
申请公布号 WO2009125143(A2) 申请公布日期 2009.10.15
申请号 WO2009FR50524 申请日期 2009.03.30
申请人 STMICROELECTRONICS (TOURS) SAS;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;BARRIERE, CLEMENT;FAU, PIERRE;CHAUDRET, BRUNO;MARGEAT, OLIVIER 发明人 BARRIERE, CLEMENT;FAU, PIERRE;CHAUDRET, BRUNO;MARGEAT, OLIVIER
分类号 H01L21/288;C23C18/38;H01L21/64;H01L21/768 主分类号 H01L21/288
代理机构 代理人
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