| 摘要 |
PURPOSE: A manufacture of a metal oxide thin film using a cyclic CVD(Chemical Vapor Deposition) or ALD(Atomic Layer Deposition) is provided to form a metal oxide thin film at a low deposition temperature. CONSTITUTION: A metal ketoiminate is introduced inside a deposition chamber. The chemically absorbed metal ketoiminate is deposited on a heated substrate. A non-reaction metal ketoiminate and an arbitrary by-product are removed by purging the deposition chamber. An oxygen-contained supply source is introduced inside the heated substrate. The arbitrary by-product is removed by purging the deposition chamber. A cyclic deposition process is repeated until a metal oxide film of desired thickness is formed.
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