| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing a crack caused by concentrated stress from being generated by reducing the deformation of semiconductor chips due to the shrinkage of sealing resin, even if each semiconductor chip to be stacked is designed to be thinner, and capable of attaining a high-density circuit in which a great number of electrodes are connected at narrow pitches while suppressing characteristic variation of semiconductor components formed on a circuit element surface; and to provide a method of fabricating the same. <P>SOLUTION: Each of the semiconductor chips stacked in multi-layers includes: through vias extending through a top main surface to a bottom surface; a circuit element surface formed on the top main surface; one or more pads arranged on the circuit element surface; bumps formed on the pads; and via pads, formed on the bottom surface thereof, to which the bumps of its upper semiconductor chip are joined, and vertical positions at which the bumps of each of the semiconductor chips are respectively arranged are different from those at which the bumps of its upper semiconductor chip are arranged. <P>COPYRIGHT: (C)2010,JPO&INPIT |
