| 摘要 |
PROBLEM TO BE SOLVED: To adjust a breakdown voltage of an ESD protection device formed by the same process with an internal element without changing a basic performance of the internal element at a final stage of an LSI manufacturing step also. SOLUTION: A junction forming region which comes into contact with a drain region and forms a PN junction therewith is formed between the drain region of a MOS structure and an element isolating region surrounding the MOS structure. COPYRIGHT: (C)2010,JPO&INPIT |
