| 摘要 |
PROBLEM TO BE SOLVED: To improve strength of a wafer and to reduce surface roughness while allowing utilization of gettering effect. SOLUTION: In a wafer processing method, the wafer (20) with a device formed on a surface (21) is held so that a backside (22) of the wafer is exposed. The backside of the wafer is ground to form a brittle destruction layer (Z) on the backside. The whole backside of the wafer is polished so that the brittle destruction layer partially remains. At this point, it is preferred to remove only a surface layer on the rear side of the wafer. It is also preferred to polish the wafer by at least one of wet polishing, dry polishing, wet etching, and dry etching. COPYRIGHT: (C)2010,JPO&INPIT
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