| 摘要 |
A semiconductor light emitter (A) includes an n-type semiconductor layer (2), a p-type semiconductor layer (4), and an active layer (3) between these two layers (2, 4). The light emitter (A) further includes an n-side electrode (5) on the n-type layer (2) and a p-side electrode (6) on the p-type layer (4). An insulating layer (7) covers the n-type and p-type layers (2),(4), while also partially covering the n-side and p-side electrodes (5),(6), leaving part of the electrodes (5, 6) exposed. The n-side electrode (5) has a first Al layer (51) formed on the n-type layer (2) and a second Ni, W, Zr or Pt layer (52) formed on the first layer (51). The p-side electrode (6) has a first Au layer (61) formed on the p-type layer (4), and a second Ni, W, Zr or Pt layer (62) formed on the first layer (61).
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