发明名称 |
METHOD FOR FABRICATING A METAL GATE STRUCTURE |
摘要 |
A method of fabricating a metal gate structure is provided. The method includes providing a semiconductor substrate with a planarized polysilicon material; patterned the planarized polysilicon material to form at least a first gate and a second gate, wherein the first gate is located on the active region and the second gate at least partially overlaps with the isolation region; forming an inter-layer dielectric material covering the gates; planarizing the inter-layer dielectric material until exposing the gates and forming an inter layer-dielectric layer; performing an etching process to remove the gates to form a first recess and a second recess within the inter-layer dielectric layer; forming a gate dielectric material on a surface of each of the recesses; forming at least a metal material within the recesses; and performing a planarization process.
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申请公布号 |
US2009258482(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20080101160 |
申请日期 |
2008.04.11 |
申请人 |
LIN CHIEN-TING;HSU CHE-HUA;CHENG LI-WEI |
发明人 |
LIN CHIEN-TING;HSU CHE-HUA;CHENG LI-WEI |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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