| 摘要 |
A very dense cross-point memory array of multi-level read/write two-terminal memory cells, and methods for its programming, are described. Multiple states are achieved using two or more films that each have bi-stable resistivity states, rather than "tuning" the resistance of a single resistive element. An exemplary memory cell includes a vertical pillar diode in series with two different bi-stable resistance films. Each bi-stable resistance film has both a high resistance and low resistance state that can be switched with appropriate application of a suitable bias voltage and current. Such a cross-point array is adaptable for two-dimensional rewritable memory arrays, and also particularly well-suited for three-dimensional rewritable (3D R/W) memory arrays.
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