发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
In a semiconductor memory device, a first ODT (On Die Termination) circuit is provided between a termination voltage port and a command input port. A first ODT controlling circuit is connected between the termination voltage port and controls the first ODT circuit to connect the termination voltage port and the command input port based on the detection result.
|
申请公布号 |
US2009256587(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20090420275 |
申请日期 |
2009.04.08 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KUBOYAMA KENICHI;ARIMA HIDEAKI |
分类号 |
H03K19/003 |
主分类号 |
H03K19/003 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|