发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 In a semiconductor memory device, a first ODT (On Die Termination) circuit is provided between a termination voltage port and a command input port. A first ODT controlling circuit is connected between the termination voltage port and controls the first ODT circuit to connect the termination voltage port and the command input port based on the detection result.
申请公布号 US2009256587(A1) 申请公布日期 2009.10.15
申请号 US20090420275 申请日期 2009.04.08
申请人 NEC ELECTRONICS CORPORATION 发明人 KUBOYAMA KENICHI;ARIMA HIDEAKI
分类号 H03K19/003 主分类号 H03K19/003
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