| 摘要 |
<p>An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film is reduced in the generation of a leak current and the film shrinkage which may be caused by thermal annealing, has a low dielectric constant, and is stable.</p> |
