| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device excelling in reliability even when formed on a flexible layer such as a resin layer. SOLUTION: The semiconductor device formed on a resin layer S includes a plurality of bottom-gate type thin-film transistors. The semiconductor device includes at least: a semiconductor layer 17 constituting the bottom-gate type thin-film transistors; first wires GL1, GL2; second wires SL; a first insulating layer 15; and a gate insulating film 19. The first insulating layer and the gate insulating film are present below the semiconductor layer, the first wires, and the second wires; and the first insulating layer and the gate insulating layer are partially removed in parts where the semiconductor layer, the first wiring lines, and the second wiring lines are not disposed. Since the first insulating layer and the gate insulating layer are partially removed, even when mechanical or thermal stress is applied to the semiconductor device, the stress is relaxed, and the occurrence of cracks in the first insulating layer and the like can be reduced. COPYRIGHT: (C)2010,JPO&INPIT |
