| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a storage having a memory (100) with an increased storage capacity. <P>SOLUTION: Data bits are vertically stored at multiple memory positions along a stack (50). The memory positions (56, 58) each include a non-magnetic layer (60, 64) and a switchable magnetic layer (62, 66). Current is passed into the stack from a current source (102), a torque is generated between the adjacent magnetic layers at the respective positions by spin momentum transfer, and the direction of magnetization is determined, so that the data bits are stored. The multiple data bits can be stored at the multiple stack memory positions. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
