| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To simplify number of processes and also improve integration required, when forming a multilayer integrated circuit comprised of multilayer structure single crystal semiconductor layers on a support substrate. <P>SOLUTION: The semiconductor device, formed by allowing a plurality of semiconductor elements to be laminated via insulating layers has a structure, such that semiconductor layers comprising the semiconductor elements are laminated via the insulating layers and a region which a semiconductor layer is in contact with a wiring is superimposed with other semiconductor layer disposed via the insulating layer. The contact region is formed by a silicide layer which extends from a conductive impurity region disposed on the semiconductor layer. In other words, the semiconductor device has a structure, such that the region in contact with the semiconductor element and wiring is formed by the silicide and is also disposed at a position superimposed with an upper layer semiconductor element, thereby a portion between the conductive impurity region that comprises the semiconductor element and a region in contact with the wiring is coupled by the silicide. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
