| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an SiC single-crystal plate which has a C surface with small processing damage such as a scratch without requiring a special device nor discharging a substance harmful to an environment. <P>SOLUTION: In a method of manufacturing an SiC single-crystal substrate, slurry containing SiO<SB>2</SB>and permanganic acid ions is used and in a state where a region of a polishing surface of a polishing pad which comes in contact with the SiC single-crystal substrate during polishing is always dipped in the slurry, the C surface of the SiC single-crystal substrate is polished. The manufacturing method is used to provide the SiC single-crystal substrate having the C surface with small processing damage. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
