发明名称 PATTERN FORMING METHOD, METHOD OF FORMING CONTACT HOLE, AND METHOD OF MANUFACTURING ELECTROOPTICAL DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern forming method capable of reducing costs by preventing resist from remaining in etching, and to provide a method of forming a contact hole and a method of manufacturing an electrooptical device. Ž<P>SOLUTION: A metal film 3 is formed on a film 2 formed on a base material 1, a resist mask 4 is formed on the metal film 3, and the metal film 3 is dry-etched by the resist mask 4 to form a metal mask 4. In the pattern forming method, the metal mask 4 is used to dry-etch a film for patterning, and the metal mask 4 is removed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009239174(A) 申请公布日期 2009.10.15
申请号 JP20080086050 申请日期 2008.03.28
申请人 EPSON IMAGING DEVICES CORP 发明人 ICHINO TOMOHIRO
分类号 H01L21/3065;H01L21/027;H01L21/28;H01L21/768 主分类号 H01L21/3065
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