| 摘要 |
<P>PROBLEM TO BE SOLVED: To decrease a contact failure or a leakage failure at a contact part of a semiconductor and a conductor to improve a process yield of a device. Ž<P>SOLUTION: A trench 31 for separating a device reaching an embedded insulating layer 24 and an active part trench 35 not reaching the embedded insulating layer 24 are simultaneously formed by forming a device structure on the surface layer of an SOI substrate 22 and varying an opening width of a mask oxide film. A first oxide film 32 is deposited on an inner periphery surface of the trench 31 for separating devices by the CVD method, and the active part trench 35 is buried with the first oxide film 32. A nitride film 33 and a second oxide film 37 are deposited to bury the trench 31 for separating devices. The second oxide film 37 and nitride film 33 on the surface of the substrate is removed. A BPSG film 36 is deposited to cover the upper part of the trench 31 for separating devices. A contact hole is formed in an interlayer insulating film 50, and metal wirings 53, 54, and 55 are brought into contact with the semiconductor through embedded plugs 51, 52, and 56. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
