发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
According to an aspect of the present invention, there is provided a semiconductor device including: a semiconductor substrate; active areas with island-like shapes formed on the semiconductor substrate; an element isolation area surrounding the active areas and including an element isolation groove formed on the semiconductor substrate and an element isolation film embedded into the element isolation groove; gate insulating films each formed on corresponding one of the active areas and having a first end portion that overhangs from the corresponding active area onto the element isolation area at one side and a second end portion that overhangs from the corresponding active area onto the element isolation area at the other side, wherein an overhang of the first end portion has a different length from a length of an overhang of the second end portion.
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申请公布号 |
US2009256190(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20090420363 |
申请日期 |
2009.04.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUZUKI ATSUHIRO;SHIMODE HIROSHI;SHIMANE TAKESHI;ARAI NORIHISA;KAJIMOTO MINORI |
分类号 |
H01L29/788;H01L21/336;H01L21/76 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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