发明名称 |
PROGRAMMABLE MEMORY REPAIR SCHEME |
摘要 |
The present disclosure provides semiconductor devices and methods, systems, and apparatus for testing and operating the same. A semiconductor memory device includes data storage elements and a repair circuit. The data storage elements include primary data storage elements and one or more redundant data storage elements, the primary data storage elements having respective addresses for memory access operations. The repair circuit is programmable by another semiconductor device separate from the memory device to recognize a malfunctioning address of the primary data storage elements and the programmed repair circuit is configured to reroute memory access from a primary data storage element having the recognized malfunctioning address to a corresponding redundant data storage element. |
申请公布号 |
WO2009126812(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
WO2009US40079 |
申请日期 |
2009.04.09 |
申请人 |
INAPAC TECHNOLOGY, INC.;ONG, ADRIAN, E.;HO, FAN |
发明人 |
ONG, ADRIAN, E.;HO, FAN |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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