| 摘要 |
<p>PURPOSE: A nonvolatile resistance random access memory device is provided to perform a stable switching property by forming a conductive filament of low number. CONSTITUTION: A nonvolatile resistance random access memory device includes a bottom electrode(110), an insulation film(120), an insulation spacer(131), an oxide resistance film(140), and a top electrode(150). The insulation film is formed on the bottom electrode, and has a contact hole. The insulation spacer is formed on a sidewall of the contact hole. The oxide resistance film is positioned inside the contact hole in which the insulation spacer is formed. The top electrode is formed on the oxide resistance film.</p> |
