| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device can use an appropriate mark pattern. <P>SOLUTION: This manufacturing method of a semiconductor device includes processes of: preparing a first circuit pattern original plate 33 having a first pattern part 33a of the mark pattern; preparing a second circuit pattern original plate 34 having a second pattern part 34a of the mark pattern; transferring the first pattern part to a mask film 32 on a base region 31 to form a first transfer pattern part 32c on the mask film; transferring the second pattern part to the mask film to form a second transfer pattern part 32d on the mask film; and patterning the base region using the mask film having a transfer mark pattern with the first transfer pattern part and the second transfer pattern part combined with each other therein as a mask to form a base mark pattern on the base region. <P>COPYRIGHT: (C)2010,JPO&INPIT |
