| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To correct a designed mask pattern by predicting a variation in manufacturing in a design stage. <P>SOLUTION: A designed mask pattern for forming a device pattern to be repeatedly disposed on a semiconductor substrate is extracted from mask layout data of a semiconductor device to be manufactured (step S2), a plurality of extracted designed mask patterns are temporarily disposed up to such a range that a shape of the designed mask pattern in the center is affected by interference of light (step S3), exposure simulation is performed with the designed mask patterns (step S4), a difference (reference difference) between the designed mask patterns and the exposure simulation result of the designed mask pattern in the center is obtained (step S5), the designed mask patterns are used to perform exposure simulation after chip layout (step S7), and a difference between the exposure simulation result and the designed mask patterns is compared with the reference difference, and the designed mask pattern is corrected on the basis of the predicted variation in manufacturing (steps S8 to S11). <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
