| 摘要 |
PROBLEM TO BE SOLVED: To suppress characteristic variation of a semiconductor device by suppressing reaction of high-dielectric-constant insulating films to other component members even after a heat treatment when the semiconductor device is manufactured by forming a gate insulating film and an interlayer insulating film of the thermally stable high-dielectric-constant insulating films. SOLUTION: In the semiconductor device, sidewalls are made of at least one of SiO<SB>2</SB>, SiN, SiON, and a top insulating film or gate insulating film is made of an oxide of at least one metal M selected from a rare earth metal group consisting of Y, Zr, Hf, and Al, Si so that the number ratio Si/M of Si to the metal M is set to no less than a number ratio at a solid solubility limit of SiO<SB>2</SB>in a composite oxide including the metal M and Al and the dielectric constant of the top insulating film or gate insulating film is equal to or less than the dielectric constant of Al<SB>2</SB>O<SB>3</SB>and so that the number ratio Al/M of Al to the metal M is set to no less than a number ratio Al/M where the crystallization of an oxide of the metal M is suppressed by the reaction of the Al element and set to no more than a number ratio where the crystallization of the Al<SB>2</SB>O<SB>3</SB>is suppressed through the action of the metal M. COPYRIGHT: (C)2010,JPO&INPIT |
