METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device performing anisotropic oxidation or anisotropic nitriding by which a silicon oxide film or a silicon nitride film is formed on a semiconductor substrate, thicker horizontally rather than vertically. Ž<P>SOLUTION: The method of manufacturing a semiconductor device has: a process for forming an element separation groove having a sidewall section and a bottom section on the surface of the semiconductor substrate 1; and a process for supplying an oxidizing ion included in plasma generated by one of microwaves, high frequencies and electron cyclotrons or a nitriding ion included in plasma to the sidewall section and bottom section of the element separation groove by applying a prescribed voltage to the semiconductor substrate 1 for performing anisotropic oxidation or anisotropic nitriding to the sidewall section and bottom section of the element separation section. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž