发明名称 |
Semiconductor device including an ohmic layer |
摘要 |
In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance.
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申请公布号 |
US2009256177(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20090453198 |
申请日期 |
2009.05.01 |
申请人 |
PARK HEE-SOOK;CHOI GIL-HEYUN;LEE CHANG-WON;LEE BYUNG-HAK;YOUN SUN-PIL;LIM DONG-CHAN;PARK JAE-HWA;LEE JANG-HEE;SOHN WOONG-HEE |
发明人 |
PARK HEE-SOOK;CHOI GIL-HEYUN;LEE CHANG-WON;LEE BYUNG-HAK;YOUN SUN-PIL;LIM DONG-CHAN;PARK JAE-HWA;LEE JANG-HEE;SOHN WOONG-HEE |
分类号 |
H01L29/80;H01L23/498;H01L23/52 |
主分类号 |
H01L29/80 |
代理机构 |
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