| 摘要 |
A method for forming very small isolated dots of a target material, e.g., a ferromagnetic material or phase change material, on a substrate includes providing a substrate having a layer of the target material disposed on a surface thereof, etching the layer of target material so as to form a plurality of lines of the material on the surface of the substrate, and etching the lines of the target material so as to form a rectangular matrix of substantially similar, very small isolated dots of the target material on the substrate. By the successive formation of orthogonally intersecting linear patterns on the substrate, including the formation and use of "hard" etch masks, spacer approach and selective etching techniques, the method enables very small (<65 nm) isolated dots of the target material to be formed on the substrate reliably and with the use of conventional 193 nm wavelength photolithographic methods and apparatus.
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