METHOD OF MAKING NONVOLATILE MEMORY CELL CONTAINING CARBON RESISTIVITY SWITCHING AS A STORAGE ELEMENT BY LOW TEMPERATURE PROCESSING
摘要
<p>A method of making a nonvolatile memory cell includes forming a steering element and forming a graphene storage element by coating a graphene containing colloid.</p>
申请公布号
WO2009126493(A1)
申请公布日期
2009.10.15
申请号
WO2009US39127
申请日期
2009.04.01
申请人
SANDISK 3D LLC;KUMAR, TAMMY;PING, ER-XUAN;ILKBAHAR, ALPER
