| 摘要 |
PURPOSE: A manufacturing method of a flash memory device is provided to lower resistance and to increase a dimension of a contact plug by widening a space between a source select line and a drain select line. CONSTITUTION: A semiconductor substrate(210) is provided. A first insulation film(230) is formed on a whole surface of the semiconductor substrate. A second insulation film(232) is formed on the first insulation film. A spacer(234) of different thickness is formed in a sidewall of a first gate line and a second gate line by etching the first insulation film and the second insulation film. The semiconductor substrate includes a first region and a second region. The first gate line is formed on the first region. The second gate line is formed on the second region.
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