EPITAXIAL SUBSTRATE, AND MANUFACTURING METHOD OF EPITAXIAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial substrate can reduce dispersion of an In composition in an active layer by using a GaN substrate having dispersion of an off-angle in a substrate surface; and a manufacturing method of the epitaxial substrate.

SOLUTION: This epitaxial substrate 1 is provided with: the GaN substrate 10 having a principal surface 10a inclined with respect to a c-plane or -c-plane of a GaN crystal; and the active layer 23 formed on the principal surface 10a of the GaN substrate 10 and having an InGaN well layer 23a. The center value of a distribution of an angle (off-angle) formed by the c-plane or -c-plane and the principal surface 10a is in the range of 15-60°, and the difference between the maximum value and the minimum value of the off-angle within the surface of the principal surface 10a is not smaller than 0.3°.

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