| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a radiosensitive composition and a polymer for a semiconductor resist, having a high transparency for a radiation and being excellent in basic physical properties for a resist, such as sensitivity and resolution, as well as in EL, LWR and a minimum collapse size when forming a line pattern. <P>SOLUTION: This polymer for a semiconductor resist contains a formula (1) unit and a formula (2) unit, wherein a content rate of a repeating unit represented by formula (1) is 0.5-10 mol% and a content rate of a repeating unit represented by formula (2) is 50-70 mol% when total repeating units included in the polymer for a semiconductor resist are 100 mol%. <P>COPYRIGHT: (C)2010,JPO&INPIT |
