| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a spin filter effect element which is low in element resistance and high in spin-polarized electron implantation efficiency or spin dependent dispersion efficiency, and to provide a spin transistor that uses such a spin filter effect element. Ž<P>SOLUTION: The spin transistor 10 is provided with: a source electrode layer 3, having a ferromagnetic laminate containing a ferromagnetic layer SM; a drain electrode layer 7, having a ferromagnetic laminate containing a ferromagnetic layer DM; a semiconductor layer 9, wherein the source electrode layer 3 and the drain electrode layer 7 are formed; and a gate electrode GE, which is provided directly in the semiconductor layer 9 or with a gate insulating layer GI installed in between. At least either of the source electrode layer 3 and the drain electrode layer 7 is further provided with oxide semiconductor layers SO and DO, which are interposed between the semiconductor layer 9 and the ferromagnetic laminates SM and DM, and the oxide semiconductor layers SO and DO form a tunnel barrier between the semiconductor layer 9 and the ferromagnetic laminates. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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