发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device in which current flows in a vertical direction includes a structure that decreases resistance between a source electrode and a drain electrode along with a current path at a position different from a position having highest electric field intensity between the source electrode and the drain electrode.
申请公布号 US2009256195(A1) 申请公布日期 2009.10.15
申请号 US20090423280 申请日期 2009.04.14
申请人 NEC ELECTRONICS CORPORATION 发明人 TAMURA JUN
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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