BONDING APPARATUS AND BONDING METHOD

摘要

Provided is a bonding device that bonds electrodes on a semiconductor die and a substrate by using a metal nano-paste. A semiconductor die (12) having electrodes (12a) on which bumps are formed by injecting fine droplets of a metal nano-paste is placed face down on a circuit board (19) having electrodes (19a) on which bumps are formed, and the electrodes (12a) on the semiconductor die (12) and the electrodes (19a) on the circuit board (19) are overlapped each other with bonding bumps (250) interposed therebetween. After that, the gap between each of the overlapped electrodes (12a, 19a) is compressed to a predetermined gap (H3) smaller than the gap obtained when the electrodes (12a, 19a) are overlapped, thereby applying pressure on the bumps between the respective electrodes (12a, 19a). In addition, the bumps between the respective electrodes (12a, 19a) are heated and metal nano-particles of the bumps are pressed and sintered to form joint metals (300), so that the electrodes (12a, 19a) are electrically connected to each other. This enables the reliability of bonding to be improved.