| 摘要 |
PURPOSE: A method of programming flash memory device using self boosting is provided to improve data retention and reliability. CONSTITUTION: The method of programming flash memory device using self boosting includes a step of increasing/decreasing pass voltage and a step of changing pass voltage. The step of increasing/decreasing pass voltage is to apply the pass voltage to memory cells. The step of changing the pass voltage is to form a gap between the channel voltage of memory cells and the voltage of wordline. The pass voltage increases the first step voltages as the size of the program voltage is bigger than 19V.
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