发明名称 |
Structure and method for surface-passivated zinc-oxide based sensor |
摘要 |
<p>A semiconductor device has a heterostructure including a first layer (14) of semiconductor oxide material. A second layer (16) of semiconductor oxide material is formed on the first layer (14) of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer (18) on the outer surface stabilizes the structure. The device also has a source contact (20) and a drain contact (22).
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申请公布号 |
EP1801886(A3) |
申请公布日期 |
2009.10.14 |
申请号 |
EP20060126150 |
申请日期 |
2006.12.14 |
申请人 |
PALO ALTO RESEARCH CENTER INCORPORATED |
发明人 |
VANDEWALLE, CHRISTIAN G.;KIESEL, PETER;SCHMIDT, OLIVER |
分类号 |
H01L29/778;G01N27/414;H01L29/22 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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