| 摘要 |
PURPOSE: A thin-film deposition method and device is provided to improve productivity and reduce investment cost by reducing the number of the deposition chamber. CONSTITUTION: The thin-film deposition method and device comprises as follows. The amorphous ITO film is formed by adding H2 to the top of the substrate. The metal layer is accumulated and is formed at the top of the substrate in which the amorphous ITO film is formed. The thin-film deposition device includes the loader(215) settled in the upper part of the carrier, the heating chamber(220) which preheating the substrate, and the deposition chamber(230) which consecutively forms the amorphous ITO film and metal layer on the substrate, the cooling chamber(240) for cooling the substrate which the crystalline ITO film and metal layer and the unloader(245) for transferring the substrate.
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