发明名称 |
METHOD FOR FORMING CHALCOGENIDE FILM AND METHOD FOR MANUFACTURING RECORDING ELEMENT |
摘要 |
<p>A method for forming a chalcogenide film within a contact hole formed in an insulating layer on a substrate, includes: preparing a target having a composition the same as that of the chalcogenide film; setting a ratio L/T of a distance L with respect to a diameter T of the target to a value not less than 0.5 and not more than 1.5, where the diameter of the target is T (m) and the distance between the target and the substrate is L (m); and forming a chalcogenide film within the contact hole by a sputtering process in which a bias electric power is applied to the substrate and a sputtering electric power is applied to the target.</p> |
申请公布号 |
EP2109142(A1) |
申请公布日期 |
2009.10.14 |
申请号 |
EP20080703828 |
申请日期 |
2008.01.24 |
申请人 |
ULVAC, INC. |
发明人 |
KIKUCHI, SHIN;NISHIOKA, YUTAKA;KIMURA, ISAO;JIMBO, TAKEHITO;SUU, KOUKOU |
分类号 |
H01L27/105;C23C14/34;H01L45/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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