| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an alignment mark capable of being accurately detected in a process of manufacturing a semiconductor device of an SOI structure having a further thinned semiconductor layers, and to provide a method of manufacturing a semiconductor device using the same. SOLUTION: This method is provided with a step of preparing an SOI substrate comprising a supporting substrate, an insulating layer formed on the supporting substrate, and a silicon layer formed on the insulating layer and provided with an element forming region and a mark forming region; a step of forming an oxidation preventing film on a predetermined position on the silicon layer in the element forming region and the mark forming region; a step of oxidizing the silicon layer exposed from the oxidation preventing film; and a step of forming an alignment mark consisting of the silicon oxidation film formed on the silicon layer in the mark forming region, and the oxidation preventing film formed on the silicon layer of the mark forming region, on the mark forming region, after the step of oxidizing the silicon layer. COPYRIGHT: (C)2005,JPO&NCIPI |
