| 摘要 |
The optical storage medium comprises a substrate layer (2), a data layer (2a) arranged on the substrate layer, a first mask layer (4) with a super resolution near field structure, arranged above the data layer, a second mask layer (6) with a super resolution near field structure arranged above the first mask layer, and a first dielectric layer (3) disposed between the first and the second mask layer (4, 6). The first and the second mask layers (4, 6) comprise a semiconductor material, which has an increased reflectivity, when irradiated with a laser beam. The semiconductor material is in particular one of the III-V semiconductor family. |
