发明名称 RESERVIOR CAPACITOR EMBEDED IN GUARD RING
摘要 PURPOSE: A reservoir capacitor formed in a guard ring is provided to reduce a dimension of a memory device by excluding a separate space for a reservoir capacitor. CONSTITUTION: A reservoir capacitor includes a guard ring(24), a gate(31), and a gate contact(32). The guard ring surrounds a circuit block which controls an operation of a memory device. The gate is formed on a top part of the guard ring. The gate contact provides a bias to the gate. A well contact(27) for providing the bias is formed in the guard ring. The guard ring is made of dopant of the same type as an active region. An oxide film is formed between the guard ring and the gate.
申请公布号 KR20090107818(A) 申请公布日期 2009.10.14
申请号 KR20080033297 申请日期 2008.04.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JONG SU;KIM, YONG HO
分类号 H01L27/10 主分类号 H01L27/10
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