发明名称 |
Semiconductor device with temperature compensation circuit |
摘要 |
<p>A semiconductor device is provided with temperature compensation functions and a temperature change detecting device is provided which detect temperature changes accurately, without requiring extra mounting space. A sensor unit (30) is composed of first semiconductor components (first-type resistors 30b and 30d) having a certain temperature coefficient and second semiconductor components (second-type resistors 30a and 30c) having a different temperature coefficient. They are located in the vicinity of a processing circuit (33) that needs temperature compensation. Changes in the temperature of the processing circuit (33) are detected by a temperature change detector (31) which observes a certain property (e.g., resistance) of the first and second semiconductor components constituting the sensor unit (30). A temperature corrector (32) corrects functions of the processing circuit (33) according to the detection result provided from the temperature change detector (31).</p> |
申请公布号 |
EP2109024(A1) |
申请公布日期 |
2009.10.14 |
申请号 |
EP20090166132 |
申请日期 |
2002.04.08 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
NANBA, HIROMI;MINOBE, KENICHI |
分类号 |
G01K7/20;G05D23/24;G01K7/24;G06F1/20;H01L21/822;H01L27/04;H03J3/04 |
主分类号 |
G01K7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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