| 摘要 |
PURPOSE: A method for forming a conductive film is provided to prevent hydrogen from leaving on a semiconductor layer made of polycrystal silicon. CONSTITUTION: A method for forming a conductive film comprises the following steps of: spraying a dispersed solution(L) containing a plurality of conductive particles to a substrate(10A); heating the dispersed solution under formic acid atmosphere; and sintering the plural conductive particles to fuse them for the formation of the conductive film. The plural conductive particles are made of one selected from copper alloy, nickel alloy, and copper-nickel alloy.
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