| 摘要 |
<p>PURPOSE: A mask for silicon crystallization, forming method of a poly-silicon thin film and manufacturing method of a thin film transistor are provided to perform dehydrogenation process stably by making the device passed through a preliminary exposure of using higher energy laser gradually. CONSTITUTION: A mask for silicon crystallization is composed of a main exposure and preliminary exposures(S1,S2,S3,S4). The main exposure includes a plurality of floodlighting regions, and the preliminary exposure includes a plurality of opaque regions. The preliminary exposure is arranged at the side of the main exposure, and the plural opaque regions have different transmittances. The transmittance of opaque region is lower, as it becomes far from the main exposure.</p> |
